1998. 6. 15
1/2
SEMICONDUCTOR
TECHNICAL DATA
2N3906S
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Low Leakage Current
: I
CEX
=-50nA(Max.), I
BL
=-50nA(Max.)
@V
CE
=-30V, V
EB
=-3V.
Excellent DC Current Gain Linearity.
Low Saturation Voltage
: V
CE(sat)
=-0.4V(Max.) @I
C
=-50mA, I
B
=-5mA.
Low Collector Output Capacitance
: C
ob
=4.5pF(Max.) @V
CB
=-5V.
Complementary to 2N3904S.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+
_
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-40
V
Collector-Emitter Voltage
V
CEO
-40
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-200
mA
Base Current
I
B
-50
mA
Collector Power Dissipation
P
C
*
350
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Note : * Package Mounted On 99.5% Alumina 10 8 0.6 )
Type Name
Marking
Lot No.
ZA
1998. 6. 15
2/2
Revision No : 1
ELECTRICAL CHARACTERISTICS (Ta=25 )
2N3906S
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CEX
V
CE
=-30V, V
EB
=-3V
-
-
-50
nA
Base Cut-off Current
I
BL
V
CE
=-30V, V
EB
=-3V
-
-
-50
nA
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=-10 A, I
E
=0
-40
-
-
V
Collector-Emitter Breakdown Voltage *
V
(BR)CEO
I
C
=-1mA, I
B
=0
-40
-
-
V
Emitter-Base Breakdown Voltage *
V
(BR)EBO
I
E
=-10 A, I
C
=0
-5.0
-
-
V
DC Current Gain *
h
FE
(1)
V
CE
=-1V, I
C
=-0.1mA
60
-
-
h
FE
(2)
V
CE
=-1V, I
C
=-1mA
80
-
-
h
FE
(3)
V
CE
=-1V, I
C
=-10mA
100
-
300
h
FE
(4)
V
CE
=-1V, I
C
=-50mA
60
-
-
h
FE
(5)
V
CE
=-1V, I
C
=-100mA
30
-
-
Collector-Emitter Saturation Voltage *
V
CE(sat)
1
I
C
=-10mA, I
B
=-1mA
-
-
-0.25
V
V
CE(sat)
2
I
C
=-50mA, I
B
=-5mA
-
-
-0.4
Base-Emitter Saturation Voltage *
V
BE(sat)
1
I
C
=-10mA, I
B
=-1mA
-0.65
-
-0.85
V
V
BE(sat)
2
I
C
=-50mA, I
B
=-5mA
-
-
-0.95
Transition Frequency
f
T
V
CE
=-20V, I
C
=-10mA, f=100MHz
250
-
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-5V, I
E
=0, f=1MHz
-
-
4.5
pF
Input Capacitance
C
ib
V
BE
=-0.5V, I
C
=0, f=1MHz
-
-
10
pF
Input Impedance
h
ie
V
CE
=-10V, I
C
=-1mA, f=1kHz
2.0
-
12
k
Voltage Feedback Ratio
h
re
1.0
-
10
x10
-4
Small-Signal Current Gain
h
fe
100
-
400
Collector Output Admittance
h
oe
3.0
-
60
Noise Figure
NF
V
CE
=-5V, I
C
=-0.1mA,
Rg=1k , f=10Hz 15.7kHz
-
-
4.0
dB
Switching Time
Delay Time
t
d
V
out
Total 4pF
C
10k
275
V =-3.0V
CC
300ns
-10.6V
0.5V
0
t ,t < 1ns, Du=2%
r
in
V
f
-
-
35
nS
Rise Time
t
r
-
-
35
Storage Time
t
stg
20
s
1N916
or equiv.
-10.9V
9.1V
V
out
Total 4pF
C
V =-3.0V
CC
275
10k
V
in
0
t ,t < 1ns, Du=2%
r f
-
-
225
Fall Time
t
f
-
-
75
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